Semiconductor apparatus and equipment

ABSTRACT

A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.16/142,651, filed Sep. 26, 2018, which claims priority from JapanesePatent Application No. 2017-192050 filed Sep. 29, 2017, which are herebyincorporated by reference herein in their entireties.

BACKGROUND OF THE INVENTION Field of the Invention

One disclosed aspect of the embodiments relates to a semiconductorapparatus having a stack of a plurality of chips.

Description of the Related Art

An imaging apparatus having a stack of a chip including a pixel circuitand a chip including an electric circuit configured to process a signalfrom the pixel circuit may be used for greatly improved values of theimaging apparatus. Japanese Patent Laid-Open No. 2012-104684 andJapanese Patent Laid-Open No. 2013-51674 disclose that a substratehaving a plurality of column circuits thereon and a substrate having apixel unit thereon are stacked.

An electric circuit configured to process a signal may have a variedproperty depending on the position of the electric circuit. According toa correspondence relationship between an electric circuit and a pixelcircuit, a resulting image may have unevenness (shading) due to suchvaried properties of the electric circuit.

SUMMARY OF THE INVENTION

A semiconductor apparatus includes a stack of a first chip having aplurality of pixel circuits arranged in a matrix form of J rows and Kcolumns and a second chip having a plurality of electric circuitsarranged in a matrix form of T rows and U columns. Each of the pluralityof electric circuits has a first part and a second part. The first partis connected to at least two pixel circuits of the plurality of pixelcircuits and the second part. The first part is configured tosequentially select a pixel circuit from the two pixel circuits toconnect to the second part. The a-th row and the e1-th column pixelcircuit of the plurality of pixel circuits are connected to the electriccircuit of the p-th row and the v-th column of the plurality of electriccircuits. The a-th row and the f1-th column pixel circuit of theplurality of pixel circuits is connected to the electric circuit of theq-th row and the v-th column of the plurality of electric circuits. Thepixel circuit of the a-th row and the g1-th column of the plurality ofpixel circuits is connected to the electric circuit of the r-th row andthe v-th column of the plurality of electric circuits. The pixel circuitof the a-th row and the h1-th column of the plurality of pixel circuitsis connected to the electric circuit of the s-th row and the v-th columnof the plurality of electric circuits. T<J and U<K, f1 and g1 areintegers between e1 and h1, and q and r are integers between p and s.

Further features of the disclosure will become apparent from thefollowing description of exemplary embodiments with reference to theattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 2A and 2B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 3A and 3B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 4A and 4B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 5A and 5B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 6A and 6B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIG. 7 is a schematic diagram illustrating an embodiment of asemiconductor apparatus.

FIG. 8 is a schematic diagram illustrating an embodiment of asemiconductor apparatus.

FIG. 9 is a schematic diagram illustrating an embodiment of asemiconductor apparatus.

FIGS. 10A and 10B are a schematic diagram illustrating an embodiment ofa semiconductor apparatus.

FIGS. 11A and 11B are a schematic diagram illustrating an embodiment ofa semiconductor apparatus.

FIGS. 12A and 12B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 13A and 13B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 14A and 14B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIG. 15 is a schematic diagram illustrating an embodiment of asemiconductor apparatus.

FIG. 16 is a schematic diagram illustrating an embodiment of asemiconductor apparatus.

FIG. 17 is a schematic diagram illustrating an embodiment of asemiconductor apparatus.

FIG. 18 is a schematic diagram illustrating an embodiment of asemiconductor apparatus.

FIGS. 19A and 19B are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 20A to 20D are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

FIGS. 21A to 21C are schematic diagrams illustrating an embodiment of asemiconductor apparatus.

DESCRIPTION OF THE EMBODIMENTS

Modes for embodying the present disclosure will be described below withreference to drawings. Like numbers refer to like parts throughout thefollowing descriptions and the plurality of drawings. Commonconfigurations will be described with mutual reference to a plurality ofdrawing, and any repetitive descriptions on like parts referred by likenumbers will be omitted.

FIG. 1A illustrates a semiconductor apparatus APR. All or a part of thesemiconductor apparatus APR are semiconductor apparatus ICs being alaminated member of a chip 1 and a chip 2. The semiconductor apparatusAPR according to this embodiment is a photoelectric conversion apparatuswhich can be used as an image sensor, an AF (Auto Focus) sensor, a lightmetering sensor, or a ranging sensor, for example. The semiconductorapparatus APR includes a stack of the chip 1 and the chip 2. The chip 1has a plurality of pixel circuits 10 in a matrix form. The chip 2 has aplurality of electric circuits 20 in a matrix form. Another stack ofdifferent chips may be provided on the opposite side of the chip 1 aboutthe chip 2. The other chip can have a DRAM cell array. The DRAM cellarray can store a signal processed by a plurality of electric circuits20.

The chip 1 includes a semiconductor layer 11 and a wiring structure 12.The semiconductor layer 11 has a plurality of semiconductor elements(not illustrated) included in a plurality of pixel circuit 10. Thewiring structure 12 includes M wiring layers (not illustrated) includedin the plurality of pixel circuit 10. The chip 2 includes asemiconductor layer 21 and a wiring structure 22. The semiconductorlayer 21 includes a plurality of semiconductor elements (notillustrated) included in a plurality of electric circuits 20. The wiringstructure 22 includes N wiring layers (not illustrated) including aplurality of electric circuits 20.

A wiring structure 12 is disposed between a semiconductor layer 11 and asemiconductor layer 21. A wiring structure 22 is disposed between thewiring structure 12 and the semiconductor layer 21.

The pixel circuit 10 includes a photoelectric conversion element,details of which will be described below, and typically further includesan amplifying element. An electric circuit 20 is an electric circuithaving a function for processing a signal from the pixel circuit 10. Theelectric circuit 20 can further include functions other than a functionfor signal processing.

FIG. 1B illustrates an equipment EQP including a semiconductor apparatusAPR. A semiconductor apparatus IC has a pixel area PX having pixels CCTincluding a pixel circuit 10 in a matrix form. The pixel CCT can includea photoelectric conversion element, an amplifying element, a microlens,and a color filter. The semiconductor apparatus IC can have a peripheralarea PR surrounding the pixel area PX. The peripheral area PR can have acircuit excluding the pixel circuit 10. The semiconductor apparatus APRcan include a package PKG storing the semiconductor apparatus IC, inaddition to the semiconductor apparatus IC. The equipment EQP caninclude at least one of an optical system OPT, a control device CTRL, aprocessing device PRCS, a display apparatus DSPL, a storage device MMRYand a mechanical apparatus MCHN. The equipment EQP will be described indetail.

First Embodiment

With reference to FIGS. 2A and 2B, a first embodiment will be described.FIG. 2A illustrates an arrangement of a plurality of pixel circuits 10in a J rows and K columns matrix form in the chip 1. Practically, J≥100,K≥100, and more preferably, J≥1000, K≥1000. The pixel circuit 10 has Jrows including the a1-th row to the a4-th row, the b1-th row to theb4-th row, the c1-th row to the c4-th row, the d1-th row to the d4-throw in this order. The a1-th row to the a4-th row includes the a1-throw, the a2-th row, the a3-th row, and the a4-th row in this order,which are collectively called the a-th row. The b1-th row to the b4-throw are collectively called the b-th row, the c1-th row to the c4-th roware collectively called the c-th row, and the d1-th row to the d4-th roware collectively called the d-th row. The a, b, c, d are positiveintegers where a<b<c<d. The a1, a2, a3, and a4 are positive integerswhere a1<a2<a3<a4. For example, when a plurality of pixel circuits 10illustrated in FIG. 2A are all pixel circuits 10, a1=1, a2=2, a3=3,a4=4, b1=5, b4=8, c1=9, c4=12, d1=13, and d4J=16. The followingdescriptions assume that the a1-th row to the d4-th row are neighboringrows. When the rows are neighboring to each other, a2=1+a1, a3=1+a2,a4=1+a3, and b1=1+a4, c1=1+b4, d1=1+c4. However, this does not deny thatthere is a row, not illustrated, between two rows.

The pixel circuit 10 has K columns including the e1-th column, the f1-thcolumn, the g1-th column, the h1-th column, the e2-th column, the f2-thcolumn, the g2-th column, and the h2-th column in this order. In otherwords, e1, f1, g1, h1, e2, f2, g2, and h2 are positive integers wheree1<f1<g1<h1<e2<f2<g2<h2. Also h2<e3<f3<g3<h3<e4<f4<g4<h4. For example,in a case where the plurality of pixel circuit 10 illustrated in FIG. 2Aare all pixel circuits 10, e1=1, f1=2, g1=3, h1=4, e2=5, f2=6, g2=7,h2=8, h5=K=20. For convenience of description, the e1-th to the h5-throws are adjacent to each other. In a case where columns are adjacent toeach other, f1=1+e1, g1=1+f1, h1=1+g1, e2=1+h4, e3=1+h2, e4=1+h3,e5=1+h4. However, this does not deny that there is a column, notillustrated, between two columns.

In the following descriptions, a pixel circuit 10 of the α-th row andthe β-th column is represented by a pixel circuit 10 (α,β). The angleformed by rows and column of the pixel circuit 10 is not limited to 90degrees but may be in a range of 60 to 120 degrees, and the rows andcolumns may be arranged in a parallelogram matrix.

Two or more pixel circuits 10 of an identical column are commonlyconnected to a signal line 14. The signal line 14 extends along adirection in which the pixel circuits 10 of an identical column aligns.For example, pixel circuits 10(a1, e1), 10(b1, e1), 10(c1, e1), and10(d1, e1) of the e1-th column are connected to a common signal line 14.Although all pixel circuits 10 of an identical column may be commonlyconnected to one signal line 14, two or more pixel circuits 10 of anpixel circuits 10 of an identical column may be commonly connected to aplurality of signal lines 14. For example, pixel circuits 10(a2, e1),10(b2, e1), 10(c2, e1), and 10(d2, e1) of the e1-th column may becommonly connected to a signal line 14 different from the signal line 14to which the pixel circuit 10(a1, e1) is connected. A plurality of pixelcircuits 10 connected to a plurality of signal lines 14 are sequentiallyselected from a pixel circuit 10 to be read to the signal line 14 andare read out. Signals from the pixel circuits 10 of an identical columnare read out in parallel to a plurality of signal lines 14 for increasedspeed of signal reading.

FIG. 2B illustrates a plurality of electric circuits 20 arranged in a Trows and U columns matrix form in the chip 2. Here, T<J, and U<K. T≥10and U≥10 more practically, and T≥1000 and U≥1000 more preferably. A T-throw of the electric circuit 20 includes the p-th, the q-th, the r-th,and the s-th rows in this order. In other words, p, q, r, s are positiveintegers where p<q<r<s. For example, a plurality of electric circuits 20illustrated in FIG. 2B are all electric circuits 20, p=1, q=2, r=3,s=T=4. The following description assumes that the p-th to the s-th rowsare neighboring to each other. When rows are neighboring, q=1+p, r=1+q,s=1+r. However, this does not deny that there is a row, not illustrated,between two rows.

A U column of the electric circuit 20 includes the v-th column, the w-thcolumn, the x-th column, the y-th column, and the z-th column in thisorder. In other words, v, w, x, y, and z are positive integers wherev<w<x<y<z. For example, when a plurality of electric circuits 20illustrated in FIG. 2B are all electric circuits 20, v=1, w=2, x=3, y=4,z=U=5. The following descriptions assume that the v-th to z-th columnsare neighboring to each other. When columns are neighboring to eachother, w=1+v, x=1+w, y=1+x, z=1+y. However, this does not deny thatthere is a column, not illustrated, between two columns.

In the following descriptions, the electric circuits 20 of the γ-th rowand the δ-th column are represented by an electric circuit 20(γ,δ). Theangle formed by rows and column of the electric circuit 20 is notlimited to 90 degrees but may be in a range of 60 to 120 degrees, andthe rows and columns may be arranged in a parallelogram matrix.

The electric circuits 20 of the v-th column include the p-th rowelectric circuit 20(p, v), the q-th row electric circuit 20(q, v), ther-th row electric circuit 20(r, v), and the s-th row electric circuit20(s, v). The electric circuits 20 of the w-th column include the p-throw electric circuit 20(p, w), the q-th row electric circuit 20(q, w),the r-th row electric circuit 20(r, w), and the s-th row electriccircuit 20(s, v).

Each of a plurality of pixel circuits 10 is connected to one of aplurality of electric circuits 20. The wiring structure 12 has aplurality of conductors 13 as illustrated in FIG. 2A, the wiringstructure 22 has a plurality of conductors 23 as illustrated in FIG. 2B.The conductor 13 and the conductor 23 are bonded so that each of aplurality of pixel circuits 10 can be electrically connected to aplurality of electric circuits 20 through the conductor 13 and theconductor 23.

A set of the pixel circuits 10 connected to an identical electriccircuit 20 is called a pixel group 15. According to this example, thepixel group 15 includes J pixel circuit 10. In one pixel group 15, allpixel circuits 10 belonging to the one pixel group 15 are connected toan identical electric circuit 20. Pixel circuits 10 not included in thepixel groups 15 other than the pixel group 15 are not connected to theidentical electric circuit 20. According to this embodiment, a pluralityof pixel circuits 10 of pixel circuits 10 of an identical column isincluded in a pixel group 15. According to this embodiment, all pixelcircuits 10 of an identical column belong to one pixel group 15. Forexample, all pixel circuits 10 of the e1-th column belong to the pixelgroup 15 e 1. Referring to FIG. 2A, the pixel group 15 included in thepixel circuit 10 of the β-th column is represented by a pixel group 15β(where β is e1, f1, e2 or the like).

FIG. 2B illustrates each of the electric circuits 20 is connected towhich pixel group 15 of a plurality of pixel groups 15 through theconductors 23 corresponding to the electric circuits 20. For example,the electric circuit 20(p, v) is connected to the pixel group 15 e 1,and the electric circuit 20(q, v) is connected to the pixel group 15 f1. The electric circuit 20(r, v) is connected to the pixel group 15 f 1,and the electric circuit 20(s, v) is connected to the pixel group 15 g1. For example, the electric circuit 20(p, w) is connected to the pixelgroup 15 e 2, electric circuit 20(q, w) is connected to the pixel group15 f 2. The electric circuit 20(r, w) is connected to the pixel group 15g 2, and the electric circuit 20(s, w) is connected to the pixel group15 h 2. For example, the electric circuit 20(p, x) is connected to thepixel group 15 e 3, and the electric circuit 20(q, x) is connected tothe pixel group 15 f 3. The electric circuit 20(r, x) is connected tothe pixel group 15 g 3, and the electric circuit 20(s, x) is connectedto the pixel group 15 h 3.

In the examples illustrated in FIGS. 2A and 2B, all pixel circuits 10 ofan identical column belong to an identical pixel group 15. Thus, the allpixel circuits 10 of the e1-th column are connected to the electriccircuit 20(p, v), and all pixel circuits 10 of the f1-th column areconnected to the electric circuit 20(q, v). All pixel circuits 10 of theg1-th column are connected to the electric circuit 20(r,v), and allpixel circuits 10 of the h1-th column are connected to the electriccircuit 20(s,v). All pixel circuits 10 of the e2-th column are connectedto the electric circuit 20(p,w), and all pixel circuits 10 of the f2-thcolumn are connected to the electric circuit 20(q,w). All pixel circuits10 of the g2-th column are connected to the electric circuit 20(r,w),and all pixel circuits 10 of the h2-th column are connected to theelectric circuit 20(s,w). All pixel circuits 10 of the e3-th column areconnected to the electric circuit 20(p,x), all pixel circuits 10 of thef3-th column are connected to the electric circuit 20(q,x). All pixelcircuits 10 of the g3-th column are connected to the electric circuit20(r,x), and all pixel circuits 10 of the h3-th column are connected tothe electric circuit 20(s,x).

In this embodiment, because e1<f1<g1<h1, p<q<r<s, for the electriccircuit 20 with an identical column number, as the column number of thepixel circuit 10 increases, the row number of the electric circuit 20 tobe connected increases.

A connection relationship between a plurality of pixel circuits 10 and aplurality of electric circuits 20 will be described. In the examplesillustrated in FIG. 2A and FIG. 2B, all pixel circuits 10 of the a-thcolumn are connected to the electric circuit 20(i,j), all pixel circuits10 of the b-th column are connected to the electric circuit 20(k,j), andall pixel circuits 10 of the c-th column are connected to the electriccircuit 20(s,j). All pixel circuits 10 of the d-th column are connectedto the electric circuit 20(i,r), all pixel circuits 10 of the e-thcolumn are connected to the electric circuit 20(k,r), and all pixelcircuits 10 of the f-th column are connected to the electric circuit20(s,r). All pixel circuits 10 of the g-th column are connected to theelectric circuit 20(i,t), all pixel circuits 10 of the h-th column areconnected to the electric circuit 20(k,t), all pixel circuits 10 of theq-th column are connected to the electric circuit 20(s,t).

According to this embodiment, because e1<f1<g1<h1, for electric circuits20 with an identical column number, as the column number of the pixelcircuits 10 increases, the row number of the electric circuits 20 to beconnected increases.

Because h1<e2, as the column number of the pixel circuits 10 increases(from the h1-th column to the e2-th column), the column number of theelectric circuits 20 to be connected changes (from the v-th column tothe w-th column). The column number of the pixel circuits 10 allocatedto an identical column electric circuits 20 is e2−e1, which is equal tothe row number T (T=e2−e1) of the electric circuits 20 included in theidentical column. In other words, for each number of columns of pixelcircuits 10 equal to T, the columns of the electric circuits 20 to beconnected change.

According to this embodiment, pixel circuits 10 for T−1 columns existbetween two pixel circuits 10 (such as the e1-th column and the e2-thcolumn) connecting to electric circuits 20 of an identical row (such asthe p-th) and neighboring column (such as the v-th column and the w-thcolumn).

The pixel circuits 10 of K columns are allocated to one of electriccircuits 20 of each column. Therefore, T×U=K. In order to increase thedegree of parallelism of signal processing, J≤K is favorable. Therefore,J≤T×U. Because T<J, U<K, T×U<J×K. Therefore, T×U−K<J×K−T×U is satisfied.Deforming this, T×U<(J+1)×K/2. Therefore, because J+1 J, T×U<J×K/2.Therefore, when the connection method according to this embodiment isadopted, it is favorable to satisfy J≤T×U<J×K/2.

The idea of the first embodiment is to reduce the distance between twoelectric circuits 20 to which pixel circuits 10 of neighboring columns(such as the e1-th column and the f1-th column) are connected. In otherwords, each of close pixel circuits 10 is connected to close electriccircuits 20. More specifically, this will be described with focus onpixel circuits 10 of 4 columns (such as the e1-th to h1-th columns) ofan identical row (such as—the a-th) and electric circuits 20 four rows(such as the p-th to s-th) of an identical column (such as a v column)connected to the pixel circuits 10 of four columns. The pixel circuits10 of middle columns (the f1-th column, the g1-th column) of pixelcircuits 10 of 4 columns are close to the pixel circuits 10 (column (thee1-th column, the h1-th column) at both ends than the pixel circuits 10of the column (the e1-th column, the h1-th column) of the pixel circuits10 for 4 columns. The electric circuits 20 of the middle rows (the q-th,the r-th) of the electric circuits 20 for 4 rows are closer to theelectric circuits 20 of the rows on the both ends (the p-th, the s-th)than the electric circuits 20 of the rows (the p-th, the s-th) of theelectric circuits 20 four 4 rows. Then pixel circuits 10 of the middlecolumns (the f1-th column, the g1-th column) of the pixel circuits 10for 4 columns are connected to electric circuits 20 of the middle column(the q-th column, the r-th column) of the electric circuits 20 for 4rows. Thus, the order of the pixel circuits 10 for 4 columns and theorder of the electric circuits 20 for 4 rows connected to the pixelcircuits 10 for 4 columns are similar or are matched. This can result ina smaller influence on a difference in property of signal processingperformed by the electric circuits 20. With respect to electric circuits20 for four rows, a property difference between an electric circuit 20of middle rows and an electric circuit 20 of one end row and a propertydifference between electric circuits 20 of the middle rows and theelectric circuit 20 of the other end are called a first propertydifference. A property difference between the electric circuit 20 of theone end row and the electric circuit 20 of the other end row is called asecond property difference. The property differences may be caused by awiring length, and the two property differences of the electric circuits20 are proportional to the distances. Therefore, the first propertydifference is smaller than the second property difference. With respectto pixel circuits 10 for 4 columns, an output difference between thepixel circuits 10 of the middle columns and the pixel circuit 10 of oneend column and an output difference between the pixel circuits 10 of themiddle columns and the pixel circuit 10 of the other end columncorresponds to the first property difference. Therefore, in order toreduce the signal output difference corresponding to tow pixel circuits10, as the distance between two pixel circuits 10 decreases, thedistance between the corresponding two electric circuits 20 may bereduced. As a result, a high quality image with smaller shading can beacquired.

This corresponds to the fact that f1 and g1 are integers between e1 andh1, and q and r are integers between p and s. Particularly, g1 may be aninteger between f1 and h1, and r may be an integer between q and s. f1may be an integer between e1 and g1, and q may be an integer between pand r. Having exemplarily described the relationship between the pixelcircuits 10 of the a-th row and the electric circuits 20 of the v-thcolumn, the same is true in the b-th row, the c-th row, the d-th row,and the same is true in the w-th column, the x-th column, the y-thcolumn, the z-th column.

Second Embodiment

With reference to FIGS. 3A and 3B, a second embodiment will bedescribed. Like numbers refer to like parts throughout, and anyrepetitive description will be omitted. FIG. 3A illustrates anarrangement of pixel circuits 10, like FIG. 2A, FIG. 3B illustrates anarrangement of electric circuits 20, like FIG. 2B. According to thesecond embodiment, the connection relationship between the electriccircuits 20 of the w-th column and the y-th column is different fromthat of the first embodiment.

All pixel circuits 10 of an identical column belong to an identicalpixel group 15. Therefore, all pixel circuits 10 of the g1-th column areconnected to the electric circuit 20(r,v), and all pixel circuits 10 ofthe h1-th column are connected to the electric circuit 20(s,v). Allpixel circuits 10 of the e2-th column are connected to the electriccircuit 20(s,w), and all pixel circuits 10 of the f2-th column areconnected to the electric circuit 20(r,w). All pixel circuits 10 of theg2-th column are connected to the electric circuit 20(q,w), and allpixel circuits 10 of the h2-th column are connected to the electriccircuit 20(p,w). All pixel circuits 10 of the e3-th column are connectedto the electric circuit 20(p,x), and all pixel circuits 10 of the f3-thcolumn are connected to the electric circuit 20(q,x). All pixel circuits10 of the g3-th column are connected to the electric circuit 20(r,x),and all pixel circuits 10 of the h3-th column are connected to theelectric circuit 20(s,x).

With respect to the pixel circuits 10 of the e1-th column to the h1-thcolumn, as the column number of the pixel circuit 10 increases, the rownumber of the corresponding electric circuit 20 increases from the p-throw to the s-th row. However, with respect to the pixel circuits 10 ofthe e2-th column to the h2-th column, as the column number of the pixelcircuits 10 increases, the row number of the corresponding electriccircuits 20 decreases from the s-th row to the p-th row. With respect tothe pixel circuits 10 of the e3-th column to the h3-th column, as thecolumn number of the pixel circuits 10 increases, the row number of thecorresponding electric circuits 20 increases from the p-th row to thes-th row. With respect to the pixel circuits 10 of the e4-th column tothe h4-th column, the column number of the pixel circuits 10 increases,the row number of the corresponding electric circuits 20 increases fromthe s-th row to the p-th correspondingly. In this manner, depending onincreases of the column number of the pixel circuits 10, the row numberof the corresponding electric circuit 20 periodically repeat increasingor decreasing.

The idea of the second embodiment is to reduce, more than the firstembodiment, the distance between two electric circuits 20 to which pixelcircuits 10 of neighboring columns (such as the h1-th column and thee2-th column) are connected. For example, the pixel group 15 h 1 isconnected to the electric circuit 20(s, v), and the pixel group 15 e 2neighboring to the pixel group 15 h 1 is connected to the electriccircuit 20(s, w) neighboring to the electric circuit 20(s, v). The pixelgroup 15 f 2 is connected to the electric circuit 20(r, w), the pixelgroup 15 g 2 is connected to the electric circuit 20(q, w), and thepixel group 15 h 2 is connected to the electric circuit 20(p, w). Theelectric circuit 20 is of interest to which the pixel circuit 10 and thepixel circuits 10 of the e2-th column are connected. The h1-th columnand the e2-th column are neighboring to each other. According to thisexample, the h1-th column and the e2-th column are adjacent to eachother (e2=h1+1). However, a group of the h1-th column and the e2-thcolumn is more neighboring than at least a group of the g1-th column andthe f2-th column. The electric circuit 20(s, v) connecting to pixelgroup 15 h 1 of the h1-th column and the electric circuit 20(s, w)connecting to the pixel group 15 e 2 of the e2-th column are of anidentical row (the s-th row). The electric circuit 20(s, v) and theelectric circuit 20(s, w) are adjacent columns (the v-th column and thew-th column). Thus, it can be said that the electric circuit 20(s, v)and the electric circuit 20(s, w) are neighboring to each other. Thus,signals corresponding to neighboring pixel circuit 10 can be processedby the neighboring electric circuit 20 having a small propertydifference. Therefore, the output difference between signalscorresponding to neighboring pixel circuits 10 can be reduced. As aresult, a high-quality image with small shading can be acquired.

Third Embodiment

A third embodiment will be described with reference to FIGS. 4A and 4B.Like numbers refer to like parts throughout, and any repetitivedescriptions will be omitted. FIG. 4A illustrates an arrangement ofpixel circuits 10, like FIG. 2A, and FIG. 4B illustrates an arrangementof electric circuits 20, like FIG. 2B. According to the thirdembodiment, the electric circuits 20 are arranged in the p1-th to s1-throws and the p2-th to s2-th rows. In this case, p1<q1<r1<s1<p2<q2<r2<s2.According to the third embodiment, the a1-th row to the b4-th row of thepixel circuits 10 are allocated to pixel groups 15 e 11 to 15 h 51, andthe c1-th row to the d4-th row of the pixel circuits 10 are allocated topixel group 15 e 12 to 15 h 52. The pixel groups 15 e 11 to 15 h 51 areconnected to the electric circuits 20 of the p1-th to s1-th rows and thev-th to z-th columns. For example, pixel circuits 10 (c, e1) of the c-throw and the e1-th columns are connected to an electric circuit 20 (p2,v) of the p2-th row and the v-th column. Pixel groups 15 e 12 to 15 h 52are connected to the p2-th to s2-th rows and electric circuits 20 of thev-th to z-th columns. The pixel circuits 10(c, f1) of the c-th row andthe f1-th columns are connected to the electric circuit 20 (q2, v) ofthe q2-th row and the v-th column. The pixel circuits 10 (c, g1) of thec-th row and the g1-th column are connected to the electric circuit 20(r2, v) of the r2-th row and the v-th column. According to the thirdembodiment, pixel circuits 10 of an identical column can perform signalprocessing in parallel on electric circuits 20 of the p1-th to s1-throws and the p2-th to s2-th rows of the electric circuit 20, which canincrease the speed of the signal processing.

Fourth Embodiment

With reference to FIGS. 5A and 5B, a fourth embodiment will bedescribed. Like numbers refer to like parts throughout, and anyrepetitive description will be omitted. FIG. 5A illustrates anarrangement of pixel circuits 10, like FIG. 2A, and FIG. 5B illustratesan arrangement of electric circuits 20, like FIG. 2B. According to thefourth embodiment, electric circuits 20 to which pixel groups includingcolumns neighboring to each other of pixel circuits 10 are connectedaccording to the third embodiment are arranged to be neighboring to eachother like the second embodiment. In other words, a pixel group 15 h 11and pixel group 15 e 21 that are neighboring to each other are connectedto an electric circuit 20(s1, v) and an electric circuit 20(s1, w) of anidentical row (the s1-th row). Also, the pixel group 15 h 12 and thepixel group 15 e 22 that are neighboring to each other are connected tothe electric circuit 20(s2, v) and the electric circuit 20(s2, w) of theidentical row (the s1-th row).

Fifth Embodiment

With reference to FIGS. 6A and 6B, a fifth embodiment will be described.Like numbers refer to like parts throughout, and any repetitivedescription will be omitted. FIG. 6A illustrates an arrangement of pixelcircuits 10, like FIG. 2A, and FIG. 6B illustrates an arrangement ofelectric circuits 20, like FIG. 2B. According to the fifth embodiment,the electric circuit 20 having pixel groups neighboring and connected toeach other according to the fourth embodiment are arranged to beneighboring to each other. In other words, pixel circuits 10 of anidentical column (such as the h1-th column) are arranged, and the pixelgroup 15 h 11 and the pixel group 15 h 12 that are neighboring to eachother are neighboring to each other. The pixel group 15 h 11 and thepixel group 15 h 12 are respectively connected to the electric circuit20(s1, v) and the electric circuit 20(p2, v) of neighboring rows (thes1-th row and the p2-th row) of an identical column (the v-th column).In the same manner, the pixel group 15 e 21 and the pixel group 15 e 22that are neighboring to each other are respectively connected to theelectric circuit 20(s1, w) and the electric circuit 20(p2, w) ofneighboring rows (the s1-th row and the p2-th row) of an identicalcolumn (the w-th column).

Six-th Embodiment

A sixth embodiment have a common configuration to those of the first tofifth embodiments. FIG. 7 illustrates an equivalent circuit of thesemiconductor apparatus illustrated in FIGS. 1A and 1B. FIG. 7illustrates pixel circuits 10 of eight rows (such as the a1-th row tothe b4-th row) and three columns (such as the e1-th column to g1-thcolumn) of the pixel circuits 10 illustrated in FIGS. 2A and 2B. FIG. 7further illustrates electric circuits 20 of three rows (such as the p-thto r-th row) and one column (such as the v-th column) of the electriccircuits 20 illustrated in FIGS. 2A and 2B.

The pixel circuit 10 of the chip 1 has four (λ) signal lines 14 a, 14 b,14 c, 14 d for pixel circuits 10 of one column. The signal lines 14 a,14 b, 14 c, and 14 d will collectively be called a signal line 14. Thepixel circuits 10 of the first row (the a1-th row) of the a-th row areconnected to the signal line 14 a. The pixel circuits 10 of the second,third, and four-th rows (the a2-th, a3-th, a4-th rows) of the a-th roware connected to the signal lines 14 b, 14 c, and 14 d in the order.With respect to the pixel circuits 10 of the λ+first row and subsequentrows, the (ρ×λ+1)-th pixel circuit 10 (where ρ is a natural number) isconnected to the signal line 14 a. The pixel circuits 10 of the(ρ×λ+2)-th row, the (ρ×λ+3)-th row, and (ρ×λ+4)-th row are connected tothe signal lines 14 b, 14 c, 14 d in the order. In a case where onecolumn has J pixels, J/λ pixel circuits 10 are commonly connected to onesignal line 14 a. The same connection relationship between the pixelcircuits 10 and the signal line 14 is also true in another column of thepixel circuits 10.

A set of pixel circuits 10 connected to an identical electric circuit 20will be called a pixel group 15. A set of λ continuously arranged pixelcircuits 10 connected to mutually different λ signal lines will becalled a pixel set 16. In this example, the pixel group 15 can include Jrows of (J) pixels and J/λ pixel sets 16. To one pixel group 15, allpixel circuits 10 belonging to the one pixel group 15 are connected toan identical electric circuit 20. To the identical electric circuit 20,pixel circuits 10 included in a pixel group 15 excluding the pixel group15 are not connected.

A current source 120 is connected to the signal lines 14 a to 14 d ofthe signal line 14. The current source 120 is configured to supplyelectric current to the signal lines of the signal line 14 via aconnecting unit 300. Although the current source 120 is provided in thechip 2, it may be provided in the chip 1.

Each of the signal lines 14 is connected to the electric circuits 20 viathe connecting unit 300. In the example in FIG. 7, columns of the pixelcircuits 10 is connected to different electric circuits 20-1, 20-2, and20-3.

The electric circuit 20 has an input unit 210, a main unit 220, and anoutput unit 230. The input unit 210 has at least λ input terminals. Theλ signal lines 14 a, 14 b, 14 c, and 14 d included in the signal line 14are connected to λ input terminals of the input unit 210. The main unit220 is configured to process signals from the pixel circuit 10, forexample. Therefore, the main unit 220 can be called a signal processingunit. The input unit 210 is configured to sequentially select the signalline 14 a, 14 b, 14 c, and 14 d of the signal line 14, and the main unit220 is configured to sequentially process signals of the signal lines 14a, 14 b, 14 c, and 14 d. The output unit 230 is configured to output asignal from the electric circuit 20.

FIG. 7 illustrates sequence numbers 01 to 08 for signals to be processedwith respect to a plurality of pixel circuits 10. First, the first pixelset 16 is selected by a scanning circuit, not illustrated. For example,signals of pixel circuits 10 of the (ρ×λ+1)-th row, signals of pixelcircuits 10 of the (ρ×λ+2)-th row, signals of pixel circuits 10 of the(ρ×λ+3)-th row, signals of pixel circuits 10 of the (ρ×λ+4)-th row aresequentially processed (sequence numbers 01 to 04). Next, the next pixelset 16 is selected by the scanning circuit, not illustrated. In otherwords, signals of pixel circuits 10 of ((ρ+1)×λ+1)-th row, signals ofpixel circuits 10 of ((ρ+1)×λ+2)-th row, signals of pixel circuits 10 of((ρ+1)×λ+3)-th row, signals of pixel circuits 10 of ((ρ+1)×λ+4)-th roware read out to the signal lines 14. Then, the input unit 210 and themain unit 220 sequentially process (sequence numbers 05 to 08) signalsof pixel circuits 10 of ((ρ+1)×λ+2)-th row, signals of pixel circuits 10of ((ρ+1)×λ+3)-th row, signals of pixel circuits 10 of ((ρ+1)×λ+4)-throw.

Signals from pixel circuits 10 of an identical row are processed inparallel by a plurality of electric circuits 20 corresponding to thepixel circuits 10 of the columns. For example, signals from the pixelcircuits 10 of the (ρ×λ+1)-th row to (ρ×λ+4)-th row can be processed inparallel between the electric circuit 20-1, the electric circuit 20-2,and the electric circuit 20-3. Also, signals of pixel circuits 10 of the((ρ+1)×λ+1)-th row to ((ρ+1)×λ+4)-th row can be processed in parallelamong the electric circuit 20-1, the electric circuit 20-2, and theelectric circuit 20-3. The processing on signals from the pixel circuits10 of the (ρ×λ+1)-th row to (ρ×λ+4)-th row is performed at a differenttime from the processing on the signals from the pixel circuits 10 ofthe ((ρ+1)×λ+1)-th row to ((ρ+1)×λ+4)-th row.

FIG. 8 illustrates an example of equivalent circuits of the pixelcircuits 10. Each of the pixel circuits 10 has photoelectric conversionelements 601 a and 601 b that are photodiodes. The photoelectricconversion elements 601 a and 601 b receive light transmitted throughone microlens, not illustrated, and a color filter. In other words, thelight incident on the photoelectric conversion element 601 a has asubstantially different wavelength from that of the light incident onthe photoelectric conversion element 601 b. The photoelectric conversionelement 601 a is connected to an electric charge detection unit 605through a transfer transistor 603 a. The electric charge detection unit605 has a floating diffusion structure. The transfer transistor 603 ahas a gate connected to a scanning circuit, not illustrated, through acontrol line 650. The photoelectric conversion element 601 b isconnected to the electric charge detection unit 605 through the transfertransistor 603 b. The transfer transistor 603 b has a gate connected toa scanning circuit, not illustrated, through a control line 655.

The electric charge detection unit 605 is connected to a resettransistor 606 and a gate of an amplification transistor 607. The resettransistor 606 and the amplification transistor 607 receive power supplyvoltage Vdd. The reset transistor 606 has a gate connected to a scanningcircuit, not illustrated, through the control line 660.

The amplification transistor 607 is connected to a selection transistor608. The selection transistor 608 has a gate connected to a verticalscanning circuit, not illustrated, through a control line 665. Theselection transistor 608 is connected to any one signal line of thesignal lines 14. The semiconductor element to be connected to theconductor 13 according to this embodiment is the selection transistor608 or, if the selection transistor 608 is omitted, it is theamplification transistor 607.

FIG. 9 illustrates an example of an equivalent circuit of the electriccircuit 20. A selection circuit 240 provided in the input unit 210 maybe a multiplexer, for example. The semiconductor element connected tothe conductor 23 can possibly be an input transistor of the multiplexeraccording to this embodiment. The electric circuit 20 in this examplecan include a successive approximation register (SAR) analog-digitalconverter as the main unit 220. A pixel signal PIX selected by theselection circuit 240 is input to an inverting input terminal (−) of acomparator circuit 260 in the main unit 220 through an auxiliary circuit250 provided in the input unit 210. The auxiliary circuit 250 may be asample/hold circuit and/or an amplifying circuit. A reference signal REFis input to a non-inverting input terminal (+) of the comparator circuit260. The reference signal REF is supplied from a signal generatingcircuit 290. The signal generating circuit 290 can include adigital-analog converter (DAC). A part of the signal generating circuit290 may be included in the electric circuits 20 arranged in a matrixform, and the remaining part may be arranged in a peripheral area PR(see FIGS. 1A and 1B). The comparator circuit 260 outputs a comparisonsignal CMP indicative of a comparison result being a magnituderelationship between the pixel signal PIX and the reference signal REF.The comparison signal CMP is stored by a storage circuit 270. Thestorage circuit 270 may be a digital memory. The comparator circuit 260and the storage circuit 270 is synchronized with a synchronizationsignal CLK from the signal generating circuit 290. The signal generatingcircuit 290 can operate in accordance with the signal stored in thestorage circuit 270. The storage circuit 270 holds a digital signal DIG.The output unit 230 includes a selection transistor to be selected by ascanning circuit (not illustrated), and when the selection transistorselected by the scanning circuit is turned on, data from a desiredelectric circuit 20 can be read out from a readout circuit (notillustrated). A digital signal (data) is output from an output circuit280 provided in the output unit 230. The output circuit 280 may includea sensing amplifier, for example. The output circuit 280 can include aparallel-serial converter and an interface circuit configured tocommunicate Low Voltage Differential Signaling (LVDS). However, theseinterface circuits may be provided externally to the electric circuit20.

A reference signal REF1 having a first signal level is input, and afirst comparison signal CMP1 indicative of the comparison result isstored in memory as a higher order bit. Next, a reference signal REF2having a second signal level different from the first signal level basedon the first comparison signal CMP1 is input, and a second comparisonsignal CMP2 indicative of the comparison result is stored in memory as amiddle order bit. Next, a reference signal REFS having a third signallevel different from the second signal level based on the secondcomparison signal CMP2 is input, and a third comparison signal CMP3indicative of the comparison result is stored in memory as a lower orderbit. In this manner, a plurality of comparisons are repeated so thatdigital signals DIG having a plurality of bits can be acquired.

It should be noted that the electric circuit 20 can perform inclinationanalog-digital conversion. In this case, the signal generating circuit290 generates a ramp signal as a reference signal REF and a count signal(not illustrated). The comparator circuit 260 is configured to inversionan output of a comparison signal CMP when the comparison result betweenthe reference signal REF and the pixel signal PIX changes. When thecomparison signal CMP is inverted, the storage circuit 270 obtains acount signal so that a digital signal DIG corresponding to the countvalue of the count signal can be obtained.

Seventh Embodiment

Examples of operations to be performed by the semiconductor apparatusaccording to the sixth embodiment will be described according to aseventh embodiment. The operations illustrated in FIGS. 10A and 10Binclude a plurality of operations to be performed in parallel:

(1) Parallel operations of reading of N signals corresponding to pixelcircuits 10 of a first row and reading of N signals corresponding topixel circuits 10 of a second row;

(2) Parallel operations of an AD conversion of N signals correspondingto pixel circuits 10 of the first row and reading of N signalscorresponding to the pixel circuits 10 of the second row;

(3) parallel operations of AD conversion on N signals corresponding tothe pixel circuits 10 of a fourth row and reading of A+B signalscorresponding to the pixel circuits 10 of the first row;

(4) parallel operations of reading of A+B signals corresponding to thepixel circuits 10 of the first row and reading of A+B signalscorresponding to the pixel circuits 10 of the second row; and

(5) Parallel operations of AD conversion on A+B signals corresponding tothe pixel circuits 10 of the first row and reading of A+B signalscorresponding to the pixel circuits 10 of the second row.

These parallel operations can reduce a waiting time from a time when themain unit 220 performs one AD conversion to the time when the main unit220 performs the next AD conversion. This can reduce the period for ADconversion of signals to be output by all pixel circuits 10. Anincreased frame rate of a semiconductor apparatus APR can further beadvanced.

A case will be described in which a focus detection mode and an imagecapturing mode are both performed as operations of an imaging apparatus.

FIGS. 11A and 11B illustrate operations for outputting signals for focusdetection by a semiconductor apparatus APR and for outputting signalsfor image capturing. Differences from the operations illustrated inFIGS. 10A and 10B will mainly be described below.

The operation for reading N signals from pixel circuits 10 from rows isthe same operation as illustrated in FIGS. 10A and 10B. The operationfor AD conversions on N signals from pixel circuits 10 from rows is thesame operation as illustrated in FIGS. 10A and 10B.

An operation for reading out A signals corresponding to the pixelcircuits 10 of each row will be described. At a time t9, the verticalscanning circuit changes signal PTXAs to be output to the pixel circuits10 of the first row to High level. Thus, electric charges accumulated inthe photoelectric conversion element 601 a are transferred to theelectric charge detection unit 605 through the transfer transistor 603a. Thus, the electric charge detection unit 605 can have a potentialcorresponding to the electric charges in the photoelectric conversionelement 601 a. The signal line 14 a of each column receive the A signalsof the pixel circuits 10 of the first row. The A signal is a firstsignal based on a signal of a part of photoelectric conversion elementsof a plurality of photoelectric conversion elements. The first signalcan be used as a signal for focus detection.

At a time t10, the vertical scanning circuit changes a signal PTXA to beoutput to the pixel circuits 10 of the second row to High level. Thus,the signal line 14 b of each column receives the A signal of the pixelcircuits 10 of the second row.

At a time t11, the vertical scanning circuit changes a signal PTXA to beoutput to the pixel circuits 10 of a third row to High level. Thus, thesignal line 14 c of each column receives A signals of the pixel circuits10 of the third row.

at a time t12, the vertical scanning circuit changes signal PTXA to beoutput to the pixel circuits 10 of the fourth row to High level. Thus,the signal line 14 d of each column receives A signals of the pixelcircuits 10 of the fourth row.

Operations for AD conversion to be performed on A signals correspondingto pixel circuits 10 of each row will be described.

At a time t17, the input unit 210 outputs signals of the signal line 14a, that is, A signals of the pixel circuits 10 of the first row to themain unit 220. The main unit 220 a converts A signals from the pixelcircuits 10 of the first row to digital signals.

At a time t18, the input unit 210 outputs signals of the signal line 14b, that is, A signals of the pixel circuits 10 of the second row to themain unit 220. The main unit 220 converts the A signals of the pixelcircuits 10 of the second row to digital signals.

At a time t19, the input unit 210 outputs signals of the signal line 14c, that is, A signals of the pixel circuits 10 of the third row to themain unit 220. The main unit 220 converts A signals of the pixelcircuits 10 of the third row to digital signals.

At a time t20, the input unit 210 a outputs signals of the signal line14 d, that is A signals of the pixel circuits 10 of the fourth row tothe main unit 220. The main unit 220 converts the A signals of the pixelcircuits 10 of the fourth row to digital signals.

The operation for reading A+B signals of the pixel circuits 10 of eachrow will be described.

At a time t18, the vertical scanning circuit changes signals PTXA, PTXBto be output to pixel circuits 10 of the first row to High level. Thus,the electric charges accumulated in the photoelectric conversionelements 601 a, 601 b are transferred to the electric charge detectionunit 605 through the transfer transistors 603 a, 603 b. Thus, the signalline 14 a receives A+B signals of the pixel circuits 10 of the firstrow.

At a time t19, the vertical scanning circuit changes signals PTXA, PTXBto be output to the pixel circuits 10 of the second row to High level.Thus, the electric charges accumulated in the photoelectric conversionelements 601 a, 601 b are transferred to the electric charge detectionunit 605 through the transfer transistors 603 a, 603 b. Thus, the signalline 14 b receives A+B signals of the pixel circuits 10 of the secondrow.

At a time t20, the vertical scanning circuit changes signals PTXA, PTXBto be output to the pixel circuits 10 of the third row to High level.Thus, the electric charge accumulated in the photoelectric conversionelements 601 a, 601 b are transferred to the electric charge detectionunit 605 through the transfer transistors 603 a, 603 b. Thus, the signalline 14 c receives A+B signals of pixel circuits 10 of the third row.

At a time t21, the vertical scanning circuit changes signal PTXA, PTXBto be output to the pixel circuits 10 of the fourth row to High level.Thus, the electric charges accumulated in the photoelectric conversionelements 601 a, 601 b are transferred to the electric charge detectionunit 605 through the transfer transistors 603 a, 603 b. Thus, the signalline 14 d receives A+B signals of the pixel circuits 10 of the fourthrow.

Operations for AD conversion on A+B signals in the pixel circuit 10 ofeach row will be described.

At a time t26, the input unit 210 outputs signals of the signal line 14a, that is, A+B signals of the pixel circuits 10 of the first row to themain unit 220. The main unit 220 converts A+B signals of the pixelcircuits 10 of the first row to digital signals.

At a time t27, the input unit 210 a outputs signals of the signal line14 b, that is, A+B signals of the pixel circuits 10 of the second row tothe main unit 220. The main unit 220 converts A+B signals of the pixelcircuits 10 of the second row to digital signals.

At a time t28, the input unit 210 a outputs signals of the signal line14 c, that is, A+B signals of the pixel circuits 10 of the third row tothe main unit 220. The main unit 220 converts A+B signals of the pixelcircuits 10 of the third row to digital signals.

At a time t29, the input unit 210 a outputs signals of the signal line14 d, that is, A+B signals of the pixel circuits 10 of the fourth row tothe main unit 220. The main unit 220 converts A+B signals of the pixelcircuits 10 of the fourth row to digital signals.

After that, the vertical scanning circuit changes signals PSEL(5) of thepixel circuits 10 of the fifth row to High level. Subsequently, the sameoperations are repeated.

In this manner, the imaging apparatus according to this embodiment canacquire digital signals based on N signals of pixels, digital signalsbased on A signals of the pixels and digital signals based on A+Bsignals of the pixel.

This embodiment can achieve increased speed because of paralleloperations performed by the semiconductor apparatus APR includingoperations illustrated in FIGS. 11A and 11B. The operations illustratedin FIGS. 11A and 11B include a plurality of operation to be performed inparallel.

(1) Parallel operations of reading of N signals corresponding to pixelcircuits 10 of a first row and reading of N signals corresponding topixel circuits 10 of a second row;

(2) Parallel operations of an AD conversion of N signals correspondingto pixel circuits 10 of the first row and reading of N signalscorresponding to the pixel circuits 10 of the second row;

(3) parallel operations of AD conversion on N signals corresponding tothe pixel circuits 10 of a fourth row and reading of A signalscorresponding to the pixel circuits 10 of the first row;

(4) Parallel operations of reading of A signals corresponding to pixelcircuits 10 of a first row and reading of A signals corresponding topixel circuits 10 of a second row;

(5) Parallel operations of an AD conversion of A signals correspondingto pixel circuits 10 of the first row and reading of A signalscorresponding to the pixel circuits 10 of the second row;

(6) parallel operations of AD conversion on A signals corresponding tothe pixel circuits 10 of a fourth row and reading of A+B signalscorresponding to the pixel circuits 10 of the first row;

(7) parallel operations of reading of A+B signals corresponding to thepixel circuits 10 of the first row and reading of A+B signalscorresponding to the pixel circuits 10 of the second row; and

(8) parallel operations of AD conversion on A+B signals corresponding tothe pixel circuits 10 of the first row and reading of A signalscorresponding to the pixel circuits 10 of the second row.

These parallel operations can reduce a waiting time from a time when themain unit 220 performs one AD conversion to the time when the main unit220 performs the next AD conversion. This can reduce the period for ADconversion of signals to be output by all pixel circuits 10. Anincreased frame rate of an imaging apparatus can further be advanced.

This embodiment is not limited to this example. For example, it may beconfigured such that, during one frame period, pixels having a colorfilter for a first color can be connected, and pixels having a colorfilter for a second color cannot be connected. Describing with focus onpixels of one column having R and G color filters, the input unit 210connects signal lines 14 a, 14 c connecting to pixels having a colorfilter for R that is the first color to the main unit 220. On the otherhand, during the one frame period, the input unit 210 may not connectthe signal lines 14 b, 14 d connecting to pixels having a color filterfor G that is a second color to the main unit 220. In thisconfiguration, signals of pixels to be input to the main unit 220 can behandled as signals corresponding to one color only. This advantageouslycan simplify correction of the AD conversion performed by the main unit220 and simplify corrects after the AD conversion.

Having described that, according to this embodiment, one electriccircuit 20 is provided correspondingly to pixel circuits 10 of onecolumn, embodiments of the present disclosure are not limited to thisexample. A plurality of electric circuits 20 can be provided for pixelcircuits 10 of one column. For example, electric circuits 20 connectedto the signal lines 14 a, 14 b is provided separately from otherelectric circuits 20 connected to the signal lines 14 c, 14 d. Aplurality of pixel columns may share one electric circuit 20.

Eighth Embodiment

With reference to FIGS. 12A and 12B, an eighth embodiment will bedescribed. Like numbers refer to like parts throughout, and anyrepetitive description will be omitted. The eighth embodiment has acommon configuration as those of the first to seventh embodiments. Theeighth embodiment relates to a signal output from the electric circuit20 after the electric circuit 20 performs processing thereon. FIG. 12Aillustrates a connection relationship between pixel circuit 10 andelectric circuit 20, and FIG. 10B illustrates outputs from the electriccircuits 20.

FIG. 12A illustrates pixel circuits 10 of the a1-th row to the a4-throw, the e1-th to the h4-th column. FIG. 12A further illustrateselectric circuits 20 of the p-th to s-th rows and the v-th row and w-thcolumn. Referring to FIG. 12A, references such as signal R11, Gr11 aregiven to signals generated by the pixel circuits 10. References R, B,Gr, Gb corresponds to colors represented by signals, and R is red color,B is blue color, and Gr and G are green color though colors representedby signals are not limited thereto. The connection relationship betweenpixel circuit 10 and electric circuit 20 is the same as that of thefirst to seventh embodiments.

While signals are processed in parallel in a plurality of electriccircuits 20, signals are read out from a plurality of electric circuit20 by sequentially selecting electric circuits 20 to output signals.

FIG. 12B illustrates timing of signal processing in the electriccircuits 20 and signal output from the electric circuit 20. At times t1to t2, signal R11, Gr11, R12, G12, R13, Gr13, R14, Gr14 from the pixelcircuits 10 of the a1-th row are processed in parallel in the electriccircuits 20. Next, at times t2 to t3, electric circuits 20 to outputsignals are sequentially selected. According to this embodiment, thef1-th column and the g1-th column are read out from the e1-th column inincreasing order of column numbers from the pixel circuits 10 of thea1-th row. In other words, signals R11, Gr11, R12, G12, R13, Gr13, R14,Gr14 are read out in this order. Next, at times t3 to t4, signal Gb11,B11, Gb12, B12, Gb13, B13, Gb14, B14 of the pixel circuits 10 of thea2-th row are processed in parallel in the electric circuits 20. Next,at times t4 to t5, electric circuit 20 to output signals aresequentially selected. According to this embodiment, the f1-th columnand the fg1-th column are read out in increasing order of column numberfrom the e1-th column from pixel circuits 10 of the a2-th row. In otherwords, signals Gb11, B11, Gb12, B12, Gb13, B13, Gb14, B14 are read outin this order. In the same manner, signals of the pixel circuits 10 ofthe a3-th row are processed in parallel at times t5 to t6, and thesignals of the pixel circuits 10 of the a3-th row are sequentiallyoutput from the e1-th column in increasing order of column number attimes t6 to t7. At times t7 to t8, signals of the pixel circuits 10 ofthe a4-th row are processed in parallel. At times t8 to t9, signals ofthe pixel circuits 10 of the a4-th row are output from the e1-th columnsequentially in increasing order of column number.

In this way, in a case where signals corresponding to pixel circuits 10of an identical row are read out in order of columns of the pixelcircuits 10, the signals corresponding to the pixel circuits 10 of theidentical row can be processed in parallel. In this case, as mainlydescribed according to the first embodiment, because four columns of thepixel circuits 10 and four rows of the corresponding electric circuits20 are aligned in the same order so that the influence of the propertydifference of the electric circuit 20 can be reduced.

According to the eighth embodiment, to read out data corresponding to aplurality of pixel circuits 10, data of pixel circuits 10 of anidentical row (such as the a1-th row) are read out from the electriccircuit 20 of a plurality of columns (such as the v-th column and thew-th column). After that, data of the pixel circuits 10 of another row(such as the a2-th row) are read out. Thus, because data of the pixelcircuits 10 can be output row by row of the pixel circuit 10, datacommunication and image processing can be performed at a high speed andefficiently.

In a case where the connection configuration like the second embodimentis applied, data may be output from a proper electric circuit 20connecting to a pixel circuit 10 such that data of the pixel circuit 10of an identical row (such as the a1-th row) can be output in columnorder of the pixel circuits 10.

Ninth Embodiment

With reference to FIGS. 13A and 13B, a ninth embodiment will bedescribed. Like numbers refer to like parts throughout, and anyrepetitive description will be omitted. The ninth embodiment is avariation example of the eighth embodiment. FIG. 13A illustrates aconnection relationship between pixel circuit 10 and electric circuit20, like FIG. 12A, and FIG. 13B illustrates outputs from the electriccircuit 20, like FIG. 12B.

The ninth embodiment is different from the eighth embodiment in thateach of the electric circuits 20 has two series of output as illustratedin FIG. 13A. Signals from the electric circuit 20 of the p-th row andthe q-th row are output to different destinations from the electriccircuit 20 of the r-th row and the s-th row. The electric circuits 20 ofan identical row and of the v-th column and the w-th column can outputsignals to an identical output destination or to different outputdestinations though they are output to an identical output destinationin this example.

FIG. 13B illustrates timing of signal processing in the electric circuit20 and signal output from the electric circuit 20. The signal processingat the times t1 to t2 and at the times t3 to t4 is -th same as that ofthe eighth embodiment. At times t2 to t3, signal output from theelectric circuit 20 of the p-th row and the electric circuit 20 of ther-th row of electric circuit 20 of the v-th column are performed inparallel. Next, the signal output from the electric circuits 20 of theq-th row and the signal output from the electric circuits 20 of the s-throw are performed in parallel. At the second half of times t2 to t3, ofthe electric circuit 20 of the w-th column, the signal output from theelectric circuits 20 of the q-th row and the signal output from theelectric circuits 20 of the s-th row are performed in parallel. Next,the signal output from the electric circuits 20 of the q-th row and thesignal output from the electric circuits 20 of the s-th row areperformed in parallel. This can reduce the time period of the time t2 tot3 for outputting signals for one row of the pixel circuits 10, comparedwith the eighth embodiment. As a result, high speed signal output isenabled, and imaging with a higher frame rate can be performed.

Tenth Embodiment

With reference to FIGS. 14A and 14B, a tenth embodiment will bedescribed. Like numbers refer to like parts throughout, and anyrepetitive description will be omitted. The tenth embodiment is avariation example of the ninth embodiment. FIG. 14A illustrates aconnection relationship between pixel circuit 10 and electric circuit20, like FIG. 13A, FIG. 14B illustrates outputs from the electriccircuit 20, like FIG. 13B.

The output destination from the electric circuits 20 of the p-th row isdifferent from the output destination from the electric circuits 20 ofthe q-th row. The output destination from the electric circuits 20 ofthe r-th row is different from the output destination from the electriccircuits 20 of the s-th row. The output destinations from the electriccircuits 20 of the p-th and the r-th rows are identical, and outputdestinations from the electric circuits 20 of the q-th and s-th rows areidentical. The electric circuits 20 of an identical row and of the v-thcolumn and the w-th column can output signals to an identical outputdestination or to different output destinations though they are outputto an identical output destination in this example.

FIG. 14B illustrates timing of signal processing in the electric circuit20 and signal output from the electric circuit 20. The signal processingat the times t1 to t2 and at the times t3 to t4 is -th same as that ofthe ninth embodiment. At times t2 to t3, signal output from the electriccircuit 20 of the p-th row and the electric circuit 20 of the q-th rowof electric circuit 20 of the v-th column are performed in parallel.Next, the signal output from the electric circuits 20 of the r-th rowand the signal output from the electric circuits 20 of the s-th row areperformed in parallel. At the second half of times t2 to t3, of theelectric circuit 20 of the w-th column, the signal output from theelectric circuits 20 of the p-th row and the signal output from theelectric circuits 20 of the q-th row are performed in parallel. Next,the signal output from the electric circuits 20 of the r-th row and thesignal output from the electric circuits 20 of the s-th row areperformed in parallel. As a result, high speed signal output is enabled,and imaging with a higher frame rate can be performed, like the ninthembodiment.

According to the ninth embodiment, signals of the pixel circuits 10 ofany adjacent two columns are output at different times. With focus on agroup of the signal R11 and the signal Gr11, they are output atdifferent times. With focus on a group of the signal Gr11 and the signalR12, they are output at different times. On the other hand, according tothe ten-th embodiment, there are a mixture of a case where signals (suchas the signal R11 and the signal Gr11) of pixel circuits 10 of adjacentcolumn are output simultaneously and a case where signals (such as asignal Gr11 and a signal R12) of pixel circuits 10 of adjacent columnare output at different times. Accordingly, the pixel circuits 10 maypossibly include a group of adjacent columns having a larger outputdifference and a group of columns having a smaller difference. Whenthere is a relatively large cause such as a jitter which fluctuates theoutput about a time axis, the signal outputs may be performed as in theninth embodiment to reduce variations in output timing between adjacentcolumns.

According to the tenth embodiment, with focus on two signalscontinuously output from an identical output series, intervals betweenpixel circuits 10 corresponding to any two signals are uniform. Forexample, signals R11, R12, R13, and R14 are all from every other rows ofthe pixel circuits 10. On the other hand, according to the ninthembodiment, focusing on two signals continuously output from anidentical output series, intervals between pixel circuits 10 for the twocorresponding signals are different. For example, the signal R11 and thesignal Gr11 are signals of the pixel circuits 10 of adjacent columns,while the signal Gr11 and the signal R13 are signals of the pixelcircuit 10 of two separate columns. Then, when the output series havedifferent output properties, different output differences are producedbetween adjacent columns of the pixel circuits 10. In a case whereoutput series have relatively large property difference, signals may beoutput as in the tenth embodiment to reduce variations in outputdifference between adjacent columns. In a case where data output from asemiconductor apparatus APR is to be processed, its algorithm can beoptimized by processing by using adjacent pixel data. Therefore, data ofneighboring pixels such as the signal Gr11 and such as the signal Gr12according to the tenth embodiment may be continuously output rather thancontinuously output of data of separate pixels such as the signal Gr11and the signal R13 according to the ninth embodiment.

Eleventh Embodiment

An eleventh embodiment is common to the first to tenth embodiments, but,among them, is preferable for the ninth embodiment or tenth embodiment.

FIG. 15 illustrates a layout of the chip 2. FIG. 15 illustrates electriccircuits 20 of the p1-th row, the q1-th row, the r1-th row, the s1-throw, the p2-th row, the q2-th row, and the s2-th row. The electriccircuits 20 are arranged in the v-th column, the w-th column, and thex-th column. Here, s1<q1<r1<s1<p2<q2<s2. Each of the electric circuits20 is respectively connected to one of a plurality of pixel groups 15,schematically illustrated. According to the eleventh embodiment, thecolumn number of the corresponding electric circuit 20 increases as thecolumn number of the pixel group 15 increases, like the firstembodiment.

According to the eleventh embodiment, in a direction of alignment of theelectric circuits 20, a plurality of readout circuits 441 and 442 areprovided with a plurality of rows of electric circuits 20 therebetween.The readout circuits 441 and 442 receive output signals from theelectric circuits 20. The signals read out to the readout circuits 441and 442 are transferred to the interface circuits 451 and 452, areconverted to a predetermined data format by the interface circuits 451and 452, and are output from the semiconductor apparatus. The interfacecircuits 451 and 452 can include an interface circuit such as aparallel-serial converter or a low voltage Differential signaling(LVDS).

The electric circuits 20 of the p1-th row, the r1-th row, the p2-th row,and the s2-th row are connected to the upper readout circuit 441. Theelectric circuits 20 of the q1-th row, the s1-th row, and the q2-th roware connected to the lower readout circuit 442. Thus, signals from aplurality of rows of the electric circuits 20 can be output in parallel.For example, the signal output from the electric circuit 20 of the p1-throw and the signal output from the electric circuit 20 of the q1-th rowcan be performed in parallel.

Twelfth Embodiment

A twelfth embodiment will be described with reference to FIG. 16. Likenumbers refer to like parts throughout, and any repetitive descriptionwill be omitted. The twelfth embodiment is a variation example of theeleventh embodiment. According to the twelfth embodiment, the electriccircuits 20 of the p1-th, q1-th, r1-th, s1-th rows are connected to oddnumbered column pixel group 15, and the electric circuits 20 of thep2-th, q2-th, and s2-th rows are connected to even numbered column pixelgroup 15. For the p1-th, q1-th, r1-th, s1-th rows, as the column number(odd numbered column) of the pixel group 15 increases, the column numberof the corresponding electric circuit 20 increases. For p2-th, q2-th,and s2-th rows, as the column number (even numbered column) of the pixelgroup 15 increases, the column number of the corresponding electriccircuit 20 increases. According to this embodiment, the electriccircuits 20 of the p1-th to s1-th rows are connected to the upper sidereadout circuit 441, and the electric circuits 20 of the p2-th to s2-throws are connected to the low side readout circuit 442. According to theeleventh embodiment, an output line connected to the electric circuits20 and the readout circuit 441 intersects with an output line connectedto the electric circuits 20 and the readout circuit 442. On the otherhand, according to the twelfth embodiment, the output line connected tothe electric circuits 20 and the readout circuit 441 intersects with theoutput line connected to the electric circuits 20 and the readoutcircuit 442. This can simplify the wiring structure 22 having the outputlines, can reduce the cost, and can reduce a undesirable influence fordata communication such as crosstalk.

Thirteenth Embodiment

With reference to FIG. 17, a thirteenth embodiment will be described.Like numbers refer to like parts throughout, and any repetitivedescription will be omitted. The thirteenth embodiment may be combinedwith the first to twelfth embodiments and particularly be combined withthe eleventh embodiment or the twelfth embodiment. FIG. 17 illustrates alayout of the chip 2. In a direction that rows of the electric circuit20 are aligned, a plurality of electric circuits 20 are provided betweena plurality of scanning circuits 461 and 462. In the direction thatcolumns of the electric circuits 20 align, a scanning circuit 463 isprovided between a plurality of columns of the electric circuits 20 andan outside edge of the chip 2. In this example, a readout circuit 441 isplaced between the scanning circuit 461 and the outside edge of the chip2. However, the scanning circuit 461 may be placed between the readoutcircuit 441 and the outside edge of the chip 2. Having described thatthe readout circuit 442 is placed between the scanning circuit 462 andthe outside edge of the chip 2, the scanning circuit 462 may be placedbetween the readout circuit 442 and the outside edge of the chip 2.

The scanning circuits 461 and 462 are connected to the electric circuits20 and are configured to scan for selecting a column having an electriccircuit 20 to output signal from the plurality of electric circuit 20.The scanning circuit 463 is connected to electric circuits 20 and isconfigured to select a row having an electric circuit 20 to output asignal from a plurality of electric circuits 20. Signals are read outfrom the electric circuit 20 selected by the scanning circuits 461 and462 and scanning circuit 463 to the readout circuits 441 and 442. Thescanning circuits 461 and 462, 463 may be a decoder or a shift register.In the direction that columns of the electric circuits 20 align, a drivecircuit 47 is provided between a plurality of columns of electriccircuit 20 and an outside edge of the chip 2. The drive circuit 47 isconfigured to supply power to each of a plurality of electric circuits20 to drive the electric circuits 20.

A signal generating circuit 48 may be a part of the signal generatingcircuit 290 illustrated in FIG. 9, for example, and is configured togenerate a synchronization signal CLK and a reference signal REF andsupply them to the electric circuits 20. The signal generating circuit48 can generate a synchronization signal and a reference signal to besupplied to an circuit other then the comparator circuit 260 in theelectric circuit 20 and can supply them to the electric circuits 20.

Fourteenth Embodiment

In a case where the chip 2 has a dimension larger than 33 mm, forexample, the chip 2 may be manufactured by performing light exposure inphotolithography on a region divided into a plurality of exposureregions to be the chip 2 (divisional exposure). The term “dimension”here can refer to a width in a direction that columns of electriccircuits 20 align. Particularly, in a case where the chip 2 is exposedby using an ArF exposure device (or possibly immersion), divisionalexposure may be used. When a divisional exposure is performed,boundaries of a plurality of exposure regions may be set positionsbetween a plurality of electric circuits 20 to prevent one electriccircuit 20 from being divided. Typically, a boundary for exposure regionmay be defined near the center of the chip 2. A wire, describedaccording to the eleventh to thirteenth embodiments, configured toconnect the electric circuits 20, the readout circuits 441 and 442, thescanning circuits 461 and 462, 463, the drive circuit 47, and the signalgenerating circuit 48 is a global wire that is longer in the chip 2. Inorder to connect photo resist patterns for global wiring in divisionalexposure, stitching exposure may be performed. Because the global wiringis driven with a low impedance, performing stitching exposure has asmall influence on the output property. Because the interface circuits451 and 452 operate at a higher frequency than the global wiring, theglobal wiring may not be connected to the interface circuits 451 and 452through stitching exposure. Accordingly, as illustrated in FIGS. 15 to17, the interface circuits 451 and 452 may advantageously be separatelyfrom the center having the boundary of the exposure region. For example,the interface circuits 451 and 452 may not be placed in the directionwhere the columns of electric circuits 20 aligned between the electriccircuits 20 of the U/2 column of the electric circuit 20 of the U columnand the outside edge of the chip 2 where U is an even number. Theinterface circuits 451 and 452 in the direction that columns of electriccircuit 20 align may not be placed between a (U+1)/2 column of electriccircuits 20 and an outside edge of the chip 2 where U is an odd number.In the example in FIGS. 15 and 16, U is 3. In the direction that columnsof electric circuits 20 align, the w-th column corresponding to thesecond column and the outside edge of the chip 2 do not have theinterface circuits 451 and 452. The interface circuits 451 and 452 areplaced between the v-th column or the x-th column and the outside edgeof the chip 2.

Fifteenth Embodiment

With reference to FIG. 18, a thirteenth embodiment will be described.Like numbers refer to like parts throughout, and any repetitivedescription will be omitted. FIG. 18 illustrates a layout of a circuitof the chip 2, like FIGS. 15 and 16.

According to the fifteenth embodiment, the readout circuits 443 and 444are placed between a part of the electric circuits 20 arranged in amatrix form and a part of the electric circuits 20 arranged in a matrixform. Thus, a more amount of data can be output simultaneously. Forexample, data of pixels of a first color can be read out from thereadout circuit 441, data of pixels of a second color can be read outfrom the readout circuit 442, data of pixels of a fourth color can beread out from the 443 and 444. Alternatively, data of pixels of a firstcolor can be read out from the readout circuit 441 and the readoutcircuit 442, data of pixels of a second color can be read out from thereadout circuit 443, data of pixels of a third color can be read outfrom the 444.

Sixteenth Embodiment

with reference to FIGS. 19A and 19B, a sixteenth embodiment will bedescribed. Like numbers refer to like parts throughout, and anyrepetitive description will be omitted. FIG. 19A illustrates a planelayout of a chip 1 a plurality of pixel circuits 10 of each row areconnected to a common scanning wire 50. Each of the scanning wires 50commonly supplies transfer signal TX such as signal PTX according to theseventh embodiment, a selection signal SEL such as a signal PSEL, areset signal RES such as a signal PRES to a plurality of pixel circuit10 of an identical row. The transfer signal TX, the selection signalSEL, and the reset signal RES will be collectively called scanningsignals.

FIG. 19B is a plane layout of a chip 2. The chip 2 has scanning circuits401, 402, and 403. The scanning circuit 401 is placed between aplurality of electric circuits 20 in the direction that columns ofelectric circuits 20 align. The scanning circuits 402 and 403 are placedbetween a plurality of electric circuits 20 and an outside edge of thechip 2 in the direction that columns of electric circuits 20 align. Atleast one of the scanning circuits 401, 402, and 403 may be provided inthe chip 2. It should be noted that one of the scanning circuits 401,402, and 403 can be provided in the chip 1 instead of the chip 2.

The scanning circuits 401, 402, and 403 are connected to conductors 23,and the scanning wires 50 connected to conductors 13. The scanningcircuits 401, 402, 403 are connected to the scanning wires 50 via theconductors 23, 13 and supply the scanning signals to the scanning wires50.

The pixel circuits 10 of the e1-th to e5-th columns are connected to thescanning wires 50. Each of the scanning wires 50 has a center part 51,one end part 52, and the other end part 53. A plurality of pixelcircuits 10 are connected across the center part 51. For example, thepart 51 is positioned between a part where pixel circuits 10 of thee2-th column are connected to the scanning wire 50 and a part where thepixel circuits 10 of the e4-th column are connected to the scanning wire50. Alternatively, the part 51 is positioned between a part where thepixel circuits 10 of the e1-th column are connected to the scanning wire50 and the part where the pixel circuits 10 of the e5-th column areconnected to the scanning wire 50. All pixel circuits 10 of an identicalrow is connected to a part between one end part 52 of the scanning wire50 and the other end part 53. In other words, the pixel circuit 10 isnot connected to the opposite side of the part 53 about the part 52 ofthe scanning wire 50, and the pixel circuit 10 is not connected to theopposite side of the part 52 about the part 53 of the scanning wire 50.

A wire (including conductors 13 and 23) from a scanning circuit 401 isconnected to the center part 51. Within the scanning wire 50, thescanning circuit 401 is connected to the part 51 between two columns ofthe pixel circuits 10. Thus, from the part 51, a scanning signal issupplied to pixel circuits 10 of the e1-th and e2-th column positionedon one side of the part 51 and to pixel circuits 10 of the e4th, e5-thcolumns positioned on the other side of the part 51. This can reduce thedistance from the part receiving a scanning signal of the scanning wire50 to the farthest pixel circuit 10, compared with a case where ascanning signal is supplied to only one of one end part 52 and the otherend part 53 of the scanning wire 50. Therefore, the delay of thescanning signal in the farthest pixel circuit 10 can be reduced, and thescanning signal can be read out at a high speed from the pixel circuit10. Accordingly, the delays can be reduced for selecting, processing,and outputting signals in parallel in a plurality of electric circuits20, for improved performance of the electric circuits 20.

According to this embodiment, the scanning circuit 402 is connected tothe parts 52 via conductors 13 and 23 so that scanning signals insynchronization with the scanning circuit 401 can be supplied from thescanning circuit 402 to the scanning wires 50. The scanning circuit 403is connected to the parts 53 via the conductors 13 and 23 so thatscanning signals in synchronization with the scanning circuit 401 can besupplied to the scanning wires 50 also from the scanning circuit 403. Inthis case, quicker read operations can be performed on the pixelcircuits 10. It should be noted that scanning signals can be suppliedfrom the scanning circuit 402 and scanning circuit 403 to the parts 52and 53, by omitting the scanning circuit 401. Alternatively, scanningsignals can be supplied from the scanning circuit 402 and/or scanningcircuit 403 to the part 51 by omitting the scanning circuit 401.However, the scanning circuit 401 may be connected to the parts 51 forimprovement against delays of scanning signals.

Seventeenth Embodiment

With reference to FIGS. 20A to 20D, a seventeenth embodiment will bedescribed. The seventeenth embodiment includes an example and avariation example of the sixteenth embodiment. Any repetitivedescriptions regarding this embodiment and the other embodiment,particularly, sixteenth embodiment will be omitted.

FIG. 20A illustrates a first example corresponding to a perspective viewof the seventeenth embodiment.

FIG. 20B illustrates a second example in which the scanning circuit 401is connected to a center part (corresponding to the part 51) of thescanning wires 50 by omitting the scanning circuits 402 and 403.

FIG. 20C illustrates a third example having scanning circuits 402, 403in a chip 1. In the direction that columns of the pixel circuits 10align, a plurality of pixel circuits 10 is positioned between thescanning circuit 402 and the scanning circuit 403. In other words, inthe direction that columns of the pixel circuits 10 align, the scanningcircuits 402, 403 are positioned between a plurality of pixel circuits10 and an outside edge of the chip 1. This can reduce the distancebetween the scanning circuit 402, 403 and the scanning wires 50 in thechip 1 and thus can increase the speed for driving the pixel circuits10.

FIG. 20D illustrates a fourth example in which the scanning wires 50 areplaced in a chip 2 instead of the chip 1. In other words, the scanningwires 50 are global wiring having a wiring layer included in a wiringstructure 22 of the chip 2. A center part (corresponding to the part 51)of the scanning wires 50 provided in the chip 2 is connected to aplurality of pixel circuits 10 via conductors 13 and 23 (notillustrated). This configuration may require conductors 13 and 14 thenumbers of which are equal to several times of the number of pixelcircuits 10 (depending on the number of types of scanning signal). Thismay possibly lead to complexity of the semiconductor apparatus APR andmay possibly increase its cost. Therefore, the scanning wires 50 mayadvantageously be provided in the wiring structure 12 of the chip 1.

Eighteenth Embodiment

With reference to FIGS. 21A to 21C, an eighteenth embodiment will bedescribed. Like numbers refer to like parts throughout, and anyrepetitive description will be omitted. The eighteenth embodiment has acommon configuration to those of the first to seventeen embodiments. Theeighteenth embodiment relates to a connection between the conductor 13and the conductor 23.

FIG. 21A illustrates a cross-sectional view of a semiconductor apparatusIC. Between the semiconductor layer 11 of the chip 1 and thesemiconductor layer 21 of the chip 2, a wiring structure 12 of the chip1 and a wiring structure 22 of the chip 2 are positioned. The wiringstructure 12 has M wiring layers 121, 122. The wiring layers 121, 122can be Cu wiring layers. In this example, the wiring layer 122 includesthe conductor 13. The conductor 13 is embedded in a recess of aninterlayer insulating film and has a damascene structure (or a dualdamascene structure in this embodiment). The wiring structure 22 has Nwiring layers 221, 222. The number (N) of the wiring layers of thewiring structure 22 may be higher than the number (M) of wiring layersof the wiring structure 12 (M>N). Thus, the performance of the pixelcircuits 10 and the electric circuits 20 can be increased, and, at thesame time, the cost of the semiconductor apparatus APR can be reduced.The wiring layers 221 and 222 can be Cu wiring layers. In this example,the wiring layer 222 includes the conductor 23. The conductor 23 isembedded in a recess of an interlayer insulating film and has adamascene structure (or a dual damascene structure in this embodiment).The conductor 13 and the conductor 23 are bonded. The interlayerinsulating film having the recess having the conductor 13 embeddedtherein is also bonded (or in contact with) the interlayer insulatingfilm having the recess having the conductor 23 embedded therein. Due toa displacement or differences in dimension of the conductor 13 and theconductor 23, the conductor 13 may face the interlayer insulating filmhaving the recess having the conductor 23 embedded therein. Theconductor 23 faces the interlayer insulating film having the recesshaving the conductor 13 embedded therein. A bonded surface 30 is acontact surface between the conductors 13 and 23 and the interlayerinsulating films. According to this example, the conductors 13 and 23having a smaller dimensions can increase the number of connecting unitsfor the pixel circuits 10 and electric circuits 20 so that more pixelcircuits 10 can be processed in parallel by the plurality of electriccircuits 20.

In the semiconductor layer 11, a photoelectric conversion element 601and an electric charge detection unit 605 are provided through atransfer transistor 603. The chip 1 has a back side irradiation lightreceiving structure. The conductor 13 is connected to a semiconductorelement of the pixel circuit 10 via the wiring layer 121. Thesemiconductor element of the pixel circuit 10 to which the conductor 13is to be connected may be a transistor, for example, but may be a diode,a resistor, or a capacitor. In this embodiment, the conductor 13 isconnected to a selection transistor 608. In the semiconductor layer 11,the photoelectric conversion element 601 and the electric chargedetection unit 605 are provided through the transfer transistor 603. Theconductor 23 is connected to the semiconductor element in the electriccircuit 20 through the wiring layer 221. The semiconductor element ofthe electric circuit 20 to which the conductor 23 is to be connected maybe a transistor, for example, but may be a diode, a resistor, or acapacitor. In this embodiment, the conductor 23 is connected to aselection circuit 240. The transistor contained in the electric circuit20 may have a silicide layer of cobalt silicide or nickel silicide, forexample. A gate electrode such as a metal gate may be provided, and agate insulating film such as a high-k insulating film may be provided. Atransistor to be used in the electric circuit 20 may be a planer-typeMOSFET or an Fin-FET. The gate insulating film of the transistorprovided in the semiconductor layer 21 may have a plurality of types ofthickness. A transistor having a thick gate insulating film may be usedin a circuit desirably having a high-withstand voltage such as a powersupply system or an analog system. A transistor having a thick gateinsulating film may be used in a circuit desirably having a high speedcharacteristic such as a digital system. The semiconductor layer 11 maybe approximately 1 to 10 μm thick, and the semiconductor layer 21 may beequal to that of the semiconductor layer 11 or may be thicker than thesemiconductor layer 11. The semiconductor layer 11 may be 50 to 800 μmthick, for example.

FIG. 21B illustrates a cross sectional view of a semiconductor apparatusAPR. The example illustrated in FIG. 21B is different from the examplein FIG. 21A in that the conductor 13 and the conductor 23 are not incontact. The conductor 13 and the interlayer insulating film having therecess having the conductor 23 embedded therein. The interlayerinsulating film having the recess having the conductor 13 embeddedtherein is separated from the interlayer insulating film having therecess having the conductor 23 embedded therein. A bump 33 is providedbetween the conductor 13 and the conductor 23. The bump 33 may require asize of approximately several or several tens uμ. However, according tothe first to eighteenth embodiments, because the number of electriccircuits 20 can be lower than the number of pixel circuits 10, apredetermined level of performance can be achieved even with use of thebump 33.

FIG. 21C illustrates a cross sectional view of a semiconductor apparatus(APR). The example illustrated in FIG. 21B is different from the examplein FIG. 21A in that the conductor 13 and the conductor 23 are not incontact. An adhesive layer 34 is provided between a wiring structure 12and a wiring structure 22 and is configured to adhere interlayerinsulating films of the wiring structure 12 and wiring structure 22. Theadhesive layer 34 has a bonded surface 30 is a contact surface betweenthe adhesive layer of the wiring structure 12 and the adhesive layer ofthe wiring structure 22. The conductor 13 and the conductor 23 areconnected through a penetrate electrode 35 configured to penetrate thesemiconductor layer 21. In this example, the penetrate electrode isprovided in the semiconductor layer 21 instead of the semiconductorlayer 11. Therefore, the penetrate electrode 35 does not preventintegration of the pixel circuit 10 and can suppress damages on thesemiconductor layer 11. However, because the penetrate electrode 35 maypossibly prevent integration of the electric circuit 20, the example inFIG. 21A is desirably applied.

Nineteenth Embodiment

According to a nineteenth embodiment, an equipment (EQP) illustrated inFIG. 1A will be described in detail. The semiconductor apparatus APR caninclude a package (PKG) configured to accommodate a semiconductorapparatus IC as well as a semiconductor apparatus IC that is a laminatedmember of the chips 1 and 2. The package PKG can include a base memberhaving a semiconductor apparatus or integrated circuit (IC) fixedthereon, lid body of glass facing the a semiconductor apparatus IC, anda connection member such as a bonding wire or a bump configured toconnect a terminal provided on the base member and a terminal providedin the semiconductor apparatus IC.

The equipment EQP can further include at least one of an optical system(OPT), a control apparatus (CTRL), a processing apparatus (PRCS),display apparatus (DSPL), and memory apparatus (MMRY). The opticalsystem OPT is configured to be focused on the semiconductor apparatusAPR as a photoelectric conversion apparatus, such as a lens, a shutter,and a mirror. The control apparatus CTRL is configured to control thesemiconductor apparatus APR, such as a semiconductor apparatus such asan application-specific integrated circuit (ASIC). The processingapparatus PRCS is configured to process a signal output from thesemiconductor apparatus APR and may be a semiconductor apparatus such asa central processing unit (CPU) or an ASIC for configuring an analogfront end (AFE) or digital front end (DFE). The display apparatus DSPLis configured to display information (image) acquired by thesemiconductor apparatus APR and is an electroluminescent (EL) displayapparatus or a liquid crystal display apparatus. The memory apparatusMMRY is a magnetic apparatus or a semiconductor apparatus configured tostore information (image) acquired by the semiconductor apparatus APR.The memory apparatus MMRY may be a volatile memory such as a staticrandom access memory (SRAM) or a dynamic random access memory (DRAM) ora nonvolatile memory such as a flash memory or a hard disk drive. Amachine apparatus (MCHN) has a movable part or driving part such as amotor or an engine. In the equipment EQP, a signal output from thesemiconductor apparatus APR may be displayed on the display apparatusDSPL or may be transmitted externally through a communication apparatus(not illustrated) included in the equipment EQP. Accordingly, theequipment EQP may further include a memory apparatus MMRY and aprocessing apparatus PRCS in addition to a storage control unit and anarithmetic operation control unit included in the semiconductorapparatus APR.

The equipment EQP illustrated in FIG. 1A can be an electronic equipmentsuch as an information terminal (such as a smart phone and a wearableterminal) having an imaging function, a camera (such as a lensreplacement camera, a compact camera, a video camera, and a monitorcamera). The machine apparatus MCHN with a camera can drive an opticalsystem OPT parts for zooming, focusing, and shutter operations. Theequipment EQP can be a transport apparatus (moving body) such as avehicle, a ship, or an airplane. The machine apparatus MCHN in atransport apparatus can be used as a movement apparatus. The equipmentEQP being a transport apparatus may be configured to transport asemiconductor apparatus APR aid and/or automate driving (steering) by animaging function. The processing apparatus PRCS configured to aid and/orautomate driving (steering) can perform processing for operating themachine apparatus MCHN being a moving apparatus based on informationacquired by the semiconductor apparatus APR.

A semiconductor apparatus APR according to the aforementionedembodiments can provide high value to designers, manufactures, sellers,purchasers and/or users. Installing a semiconductor apparatus APR in theequipment EQP can improve the value of the equipment EQP. Therefore,determination of installation of a semiconductor apparatus APR in theequipment EQP according to this embodiment in manufacturing or sellingthe equipment EQP can advantageously increase the value of the equipmentEQP.

The aforementioned embodiments can be changed, altered or modified asrequired without departing from the spirit and scope of the presentdisclosure. The disclosure of the embodiments can include not onlydetails specified herein but also all matters grasped from theDescription and the appended drawings. Components with the same namesbut with different references can be distinguished as a first component,a second component, a third component and so on.

While the disclosure has been described with reference to exemplaryembodiments, it is to be understood that the disclosure is not limitedto the disclosed exemplary embodiments. The scope of the followingclaims is to be accorded the broadest interpretation so as to encompassall such modifications and equivalent structures and functions.

What is claimed is:
 1. A semiconductor apparatus comprising: a pluralityof conductor portions; and a stack of a first chip having a plurality ofpixel circuits arranged in a matrix form of rows and columns and aplurality of signal lines, and a second chip having a plurality ofelectric circuits, wherein each of the plurality of electric circuitshas a first part and a second part, and the first part is connected toat least two pixel circuits of the plurality of pixel circuits and thesecond part, and the first part is configured to sequentially select apixel circuit from the two pixel circuits to connect to the second part,wherein a first signal line of the plurality of signal lines connectedto a a1-th row and a e1-th column pixel circuit of the plurality ofpixel circuits is connected to a first electric circuit of the pluralityof electric circuits via a first conductor portion of the plurality ofconductor portions, wherein the first signal line of the plurality ofsignal lines connected to the a1-th row and a e2-th column pixel circuitof the plurality of pixel circuits is connected to a second electriccircuit of the plurality of electric circuits via a second conductorportion of the plurality of conductor portions, wherein a third signalline of the plurality of signal lines connected to the a1-th row and ae3-th column pixel circuit of the plurality of pixel circuits isconnected to a third electric circuit of the plurality of electriccircuits via a third conductor portion of the plurality of conductorportions, wherein a fourth signal line of the plurality of signal linesconnected to the a1-th row and a e4-th column pixel circuit of theplurality of pixel circuits is connected to a fourth electric circuit ofthe plurality of electric circuits via a fourth conductor portion of theplurality of conductor portions, wherein a second signal line and thethird signal line are arranged between the first signal line and thefourth signal line, wherein a first virtual line extending along a rowdirection parallel to the a1-th row passes through the first conductorportion and the fourth conductor portion, wherein a second virtual lineextending along the row direction passes through the second conductorportion and the third conductor portion, wherein a length between thefirst conductor portion and the fourth conductor portion is greater thana length between the second conductor portion and the third conductorportion.
 2. The semiconductor apparatus according to claim 1, whereinthe first virtual line does not pass through the second conductorportion and the third conductor portion, the second virtual line doesnot pass through the first conductor portion and the fourth conductorportion.
 3. The semiconductor apparatus according to claim 1, whereinthe first virtual line passes through the second conductor portion andthe third conductor portion, the second virtual line passes through thefirst conductor portion and the fourth conductor portion.
 4. Thesemiconductor apparatus according to claim 1, wherein the plurality ofpixel circuits are arranged in a matrix form of J rows and K columns andthe plurality of electric circuits are arranged in a matrix form of Trows and U columns, wherein T<J and U<K.
 5. The semiconductor apparatusaccording to claim 1, wherein a fifth signal line of the plurality ofsignal lines connected to the a1-th row and a e5-th column pixel circuitof the plurality of pixel circuits is connected to a fifth electriccircuit of the plurality of electric circuits via a fifth conductorportion of the plurality of conductor portions, wherein a sixth signalline of the plurality of signal lines connected to the a1-th row and ae6-th column pixel circuit of the plurality of pixel circuits isconnected to a sixth electric circuit of the plurality of electriccircuits via a sixth conductor portion of the plurality of conductorportions, wherein the fifth signal line and the sixth signal line arearranged between the first signal line and the fourth signal line,wherein a third virtual line extending along the row direction passesthrough the fifth conductor portion and the sixth conductor portion,wherein a length between the first conductor portion and the fourthconductor portion is greater than a length between the fifth conductorportion and the sixth conductor portion.
 6. The semiconductor apparatusaccording to claim 5, wherein the first virtual line is positionedbetween the second virtual line and the third virtual line.
 7. Thesemiconductor apparatus according to claim 6, wherein the fifth signalline is arranged between the first signal line and the second signalline, the sixth signal line is arranged between the third signal lineand the fourth signal line, wherein a length between the fifth conductorportion and the sixth conductor portion is greater than a length betweenthe second conductor portion and the third conductor portion.
 8. Thesemiconductor apparatus according to claim 1, wherein each of theplurality of conductor portions is formed by copper.
 9. Thesemiconductor apparatus according to claim 1, wherein each of theplurality of conductor portions is formed in the first chip.
 10. Thesemiconductor apparatus according to claim 8, wherein each of theplurality of conductor portions is formed in the first chip.
 11. Thesemiconductor apparatus according to claim 8, wherein each of theplurality of conductor portions is formed in a recess of an insulatingfilm in the first chip, wherein each of the plurality of conductorportions is bonded to a conductor portion of the second chip formed bycopper in a recess of an insulating film in the second chip, wherein theinsulating film in the first chip and the insulating film in the secondchip are bonded.
 12. The semiconductor apparatus according to claim 1,wherein each of the plurality of electric circuits includes ananalog-digital converter.
 13. The semiconductor apparatus according toclaim 12, wherein the analog-digital converter is a successiveapproximation register analog-digital converter.
 14. The semiconductorapparatus according to claim 1, wherein each of the plurality ofelectric circuits includes a multiplexer.
 15. The semiconductorapparatus according to claim 14, wherein each of the plurality ofelectric circuits has a third part connected to the second part, andwherein the third part includes a sensing amplifier.
 16. Equipmentcomprising the semiconductor apparatus according to claim 1 and furthercomprising at least some of: an optical system configured to be focusedon the semiconductor apparatus, a control apparatus configured tocontrol the semiconductor apparatus, a processing apparatus configuredto process a signal output from the semiconductor apparatus, a machineapparatus configured to be controlled based on information obtained bythe semiconductor apparatus, a display apparatus configured to displaythe information obtained by the semiconductor apparatus, and a memoryapparatus configured to store the information obtained by thesemiconductor apparatus.